The tunnel diode is similar to a standard p-n
junction in many respects except that the doping
levels are very high. Also the depletion region, the
area between the p-type and n-type areas, where there
are no carriers is very narrow. Typically it is in
the region of between five to ten nano-metres - only
a few atom widths.
As the depletion region is so narrow this means that
if it is to be used for high frequency operation the
diode itself must be made very small to reduce the
high level of capacitance resulting from the very
narrow depletion region.
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